The TS32MSQ64V6M is a 32M x 64bits DDR2-667 SO-DIMM. The TS32MSQ64V6M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS32MSQ64V6M is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.\r\nSynchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.\r\n\r\nFeatures\r\n-RoHS compliant products.\r\n-JEDEC standard 1.8V ± 0.1V Power supply\r\n-VDDQ=1.8V ± 0.1V\r\n-Max clock Freq: 267MHZ; 667Mb/s/Pin.\r\n-Posted CAS\r\n-Programmable CAS Latency: 3,4,5\r\n-Programmable Additive Latency :0, 1,2,3 and 4\r\n-Write Latency (WL) = Read Latency (RL)-1\r\n-Burst Length: 4,8(Interleave/nibble sequential)\r\n-Programmable sequential / Interleave Burst Mode\r\n-Bi-directional Differential Data-Strobe (Single-ended\r\ndata-strobe is an optional feature)\r\n-Off-Chip Driver (OCD) Impedance Adjustment\r\n-MRS cycle with address key programs.\r\n-On Die Termination\r\n-Serial presence detect with EEPROM
Confezione:
Peso Lordo: 10 Kg
Dimensioni Lorde: 100x100x100 mm
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